bc327 thru bc328 vishay semiconductors formerly general semiconductor document number 88158 www.vishay.com 08-may-02 1 small signal transistors (pnp) features pnp silicon epitaxial planar transistors for switching and amplifier applications. especially suitable for af-driver stages and low-power output stages. these types are also available subdivided into three groups, -16, -25, and -40, according to their dc current gain. as complementary types, the npn transistors bc327 and bc338 are recommended. ?on special request, these transistors are also manufactured in the pin configuration to-18. mechanical data case: to-92 plastic package weight: approx. 0.18g packaging codes/options: e6/bulk 5k per container, 20k/box e7/4k per ammo mag., 20k/box maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit collector-emitter voltage bc327 v ces 50 v bc328 30 collector-emitter voltage bc327 v ceo 45 v bc328 25 emitter-base voltage v ebo 5v collector current i c 800 ma peak collector current i cm 1a base current i b 100 ma power dissipation at tamb = 25 cp tot 625 (1) mw thermal resistance junction to ambient air r ja 200 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) valid provided that leads are kept at ambient temperature at a distance of 2mm from case. 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) 0.098 (2.5) max. ? 0.022 (0.55) bottom view to-226aa (to-92) dimensions in inches and (millimeters)
bc327 thru bc328 vishay semiconductors formerly general semiconductor www.vishay.com document number 88158 2 08-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit current gain group -16 100 160 250 -25 -v ce = 1 v, -i c = 100 ma 160 250 400 dc current gain -40 h fe 250 400 630 current gain group -16 60 130 -25 -v ce = 1 v, -i c = 300 ma 100 200 -40 170 320 bc327 -v ce = 45 v 2 100 na collector-emitter cutoff current bc328 -i ces -v ce = 25 v 2 100 na bc327 -v ce = 45 v, t amb = 125 c 10 a bc328 -v ce = 25 v, t amb = 125 c 10 a collector saturation voltage -v cesat - i c = 500 ma, -i b = 50 ma 0.7 v base-emitter voltage -v be - v ce = 1 v, -i c = 300 ma 1.2 v collector-emitter breakdown voltage bc327 -v( br)ceo -i c = 10 ma 45 v bc328 25 collector-emitter breakdown voltage bc327 -v( br)ces -i c = 0.1 ma 50 v bc328 30 emitter-base breakdown voltage -v( br)ebo - i e = 0.1 ma 5 v gain-bandwidth product f t - v ce = 5 v, -i c = 10 ma 100 mhz f = 50 mhz collector-base capacitance c cbo - v cb = 10 v, f = 1 mhz 12 pf
bc327 thru bc328 vishay semiconductors formerly general semiconductor document number 88158 www.vishay.com 08-may-02 3 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bc327 thru bc328 vishay semiconductors formerly general semiconductor www.vishay.com document number 88158 4 08-may-02 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bc327 thru bc328 vishay semiconductors formerly general semiconductor document number 88158 www.vishay.com 08-may-02 5 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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